IRHNJ597230

Specifications

Drainsource On Resistancemax

0.505 Ω

Minimum Operating Temperature C

-55

Part Life Cycle Code

Active

Yüzey Montaj

YES

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

200

Qualification Status

Not Qualified

Lead Shape

No Lead

ECCN Kodu

EAR99

Configuration

Single

Reflow Temperaturemax S

NOT SPECIFIED

JESD-609 Kodu

e0

Typical Rise Time Ns

35(Max)

Ds Breakdown Voltagemin

200 V

Case Connection

DRAIN

Channel Mode

Enhancement

Number Of Elements Per Chip

1

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Additional Feature

HIGH RELIABILITY

Standard Package Name

SMD

Supplier Package

SMD-0.5

Maximum Operating Temperature C

150

Operating Mode

ENHANCEMENT MODE

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Risk Rank

5.35

Maximum Gate Source Voltage V

±20

Reference Standard

RH - 100K Rad(Si)

Automotive

No

Package Height

2.61(Max)

Polaritychannel Type

P-CHANNEL

Channel Type

P

Üretici Parça No

IRHNJ597230

Number Of Elements

1

Eccn Us

Contact Export

Pcb Changed

3

Package Length

7.64(Max)

Operating Temperaturemin

-55 °C

Category

Power MOSFET

Package Shape

RECTANGULAR

Operating Temperaturemax

150 °C