IRHNJ57230SESCS

Specifications

Package Width

10.28(Max)

Maximum Continuous Drain Current A

12

Risk Rank

5.32

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Number Of Terminals

3

Terminal Pozisyonu

BOTTOM

Operating Mode

ENHANCEMENT MODE

Supplier Package

SMD-0.5

Jesd30 Code

R-CBCC-N3

Transistor Application

SWITCHING

Package Length

7.64(Max)

Mounting

Surface Mount

Package Shape

RECTANGULAR

Package Style

CHIP CARRIER

Terminal Formu

NO LEAD

Package Height

2.61(Max)

Polaritychannel Type

N-CHANNEL

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pcb Changed

3

Number Of Elements

1

Channel Type

N

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Üretici Parça No

IRHNJ57230SESCS

ECCN Kodu

EAR99

Pin Sayısı

3

Qualification Status

Not Qualified

Package Description

HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

Maximum Power Dissipation Mw

750000

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

0.22 Ω

Drain Currentmax Id

12 A

Maximum Drain Source Voltage V

200

Eu Rohs

Supplier Unconfirmed

Yüzey Montaj

YES

Transistor Element Material

SILICON

Part Life Cycle Code

Active

Avalanche Energy Rating Eas

60 mJ

Terminal Kaplaması

TIN LEAD

Pulsed Drain Currentmax Idm

48 A