IRHNJ57230SE

Specifications

ECCN Kodu

EAR99

Lead Shape

No Lead

Qualification Status

Not Qualified

Drainsource On Resistancemax

0.22 Ω

Yüzey Montaj

YES

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

200

Minimum Operating Temperature C

-55

Part Life Cycle Code

Active

Number Of Elements Per Chip

1

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Reflow Temperaturemax S

NOT SPECIFIED

Configuration

Single

Typical Rise Time Ns

100(Max)

Ds Breakdown Voltagemin

200 V

Case Connection

DRAIN

Channel Mode

Enhancement

JESD-609 Kodu

e0

Risk Rank

5.18

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Maximum Gate Source Voltage V

±20

Standard Package Name

SMD

Operating Mode

ENHANCEMENT MODE

Supplier Package

SMD-0.5

Maximum Operating Temperature C

150

Package Length

7.64(Max)

Category

Power MOSFET

Package Shape

RECTANGULAR

Operating Temperaturemax

150 °C

Automotive

No

Package Height

2.61(Max)

Polaritychannel Type

N-CHANNEL

Pcb Changed

3

Channel Type

N

Üretici Parça No

IRHNJ57230SE

Number Of Elements

1

Eccn Us

EAR99

Typical Gate Charge Vgs Nc

28(Max)@12V

Package Description

SMD0.5, 3 PIN

Pin Sayısı

3