IRHNA9064

Specifications

Maximum Idss Ua

25

Maximum Power Dissipation Mw

300000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

300(Max)@12V

Process Technology

HEXFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

60

Eu Rohs

Not Compliant

Typical Turnoff Delay Time Ns

200(Max)

Typical Fall Time Ns

200(Max)

Typical Turnon Delay Time Ns

35(Max)

Number Of Elements Per Chip

1

Maximum Gate Threshold Voltage V

4

Channel Mode

Enhancement

Typical Rise Time Ns

150(Max)

Configuration

Single

Hts

8541.29.00.95

Parça Durumu

Active

Maximum Gate Source Leakage Current Na

100

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

48

Package Width

17.65(Max)

Maximum Operating Temperature C

150

Supplier Package

SMD-2

Ppap

No

Typical Input Capacitance Vds Pf

6700@25V

Standard Package Name

SMD

Category

Power MOSFET

Package Length

13.46(Max)

Mounting

Surface Mount

Eccn Us

Contact Export

Channel Type

P

Pcb Changed

3

Maximum Drain Source Resistance Mohm

48@12V

Package Height

3.07(Max)

Automotive

No