IRHNA67264

Specifications

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Maximum Drain Source Voltage V

250

Yüzey Montaj

YES

Transistor Element Material

SILICON

Part Life Cycle Code

Transferred

Minimum Operating Temperature C

-55

Drainsource On Resistancemax

0.018 Ω

Terminal Kaplaması

TIN LEAD

Number Of Elements Per Chip

1

Case Connection

DRAIN

Channel Mode

Enhancement

Typical Rise Time Ns

150(Max)

Ds Breakdown Voltagemin

150 V

JESD-609 Kodu

e0

Reflow Temperaturemax S

NOT SPECIFIED

Configuration

Single

Maximum Gate Source Voltage V

±20

Risk Rank

7.79

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Operating Mode

ENHANCEMENT MODE

Maximum Operating Temperature C

150

Supplier Package

SMD-2

Standard Package Name

SMD

Operating Temperaturemax

150 °C

Category

Power MOSFET

Kurşunsuz Kodu

No

Package Shape

RECTANGULAR

Package Length

13.46(Max)

Pcb Changed

3

Number Of Elements

1

Eccn Us

Contact Export

Channel Type

N

Üretici Parça No

IRHNA67264

Polaritychannel Type

N-CHANNEL

Package Height

3.07(Max)

Automotive

No

Maximum Power Dissipation Mw

250000

Typical Gate Charge Vgs Nc

220@12V

Pin Sayısı

3