IRHNA67260

Specifications

Maximum Power Dissipation Mw

250000

Typical Gate Charge Vgs Nc

240(Max)@12V

Pin Sayısı

3

Package Description

SMD-2, 3 PIN

Eu Rohs

Not Compliant

Avalanche Energy Rating Eas

268 mJ

REACH Uyumluluk Kodu

unknown

Drain Currentmax Id

56 A

Turnoff Timemax Toff

150 ns

Typical Turnoff Delay Time Ns

70(Max)

Rohs Code

No

Pulsed Drain Currentmax Idm

224 A

Typical Turnon Delay Time Ns

40(Max)

Typical Fall Time Ns

30(Max)

Drain Currentmax Abs Id

56 A

Parça Durumu

Active

Hts

8541.29.00.95

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Package Width

17.65(Max)

Maximum Continuous Drain Current A

56

Ppap

No

Jesd30 Code

R-CBCC-N3

Number Of Terminals

3

Terminal Pozisyonu

BOTTOM

Typical Input Capacitance Vds Pf

8120@25V

Package Style

CHIP CARRIER

Terminal Formu

NO LEAD

Transistor Application

SWITCHING

Mounting

Surface Mount

Maximum Drain Source Resistance Mohm

28@12V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

250 W

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Maximum Drain Source Voltage V

200

Yüzey Montaj

YES

Transistor Element Material

SILICON

Part Life Cycle Code

Active

Minimum Operating Temperature C

-55