IRHNA63160

Specifications

Typical Turnoff Delay Time Ns

75(Max)

Typical Gate Charge10v Nc

170(Max)

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

35(Max)

Typical Fall Time Ns

20(Max)

Typical Rise Time Ns

75(Max)

Channel Mode

Enhancement

Parça Durumu

Active

Configuration

Single

Hts

8541.29.00.95

Maximum Power Dissipation Mw

250000

Typical Gate Charge Vgs Nc

170(Max)@10V

Pin Sayısı

3

Eu Rohs

Not Compliant

Maximum Drain Source Voltage V

100

Minimum Operating Temperature C

-55

Category

Power MOSFET

Mounting

Surface Mount

Package Length

13.46(Max)

Maximum Drain Source Resistance Mohm

10@12V

Pcb Changed

3

Channel Type

N

Eccn Us

EAR99

Automotive

No

Package Height

3.07(Max)

Maximum Gate Source Voltage V

±20

Package Width

17.65(Max)

Maximum Continuous Drain Current A

56

Ppap

No

Supplier Package

SMD-2

Maximum Operating Temperature C

150

Standard Package Name

SMD

Typical Input Capacitance Vds Pf

8690@25V