IRHNA57260SE

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Maximum Drain Source Resistance Mohm

38@12V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Power Dissipationmax Abs

300 W

Terminal Formu

NO LEAD

Package Style

CHIP CARRIER

Mounting

Surface Mount

Transistor Application

SWITCHING

Jesd30 Code

R-CBCC-N3

Ppap

No

Typical Input Capacitance Vds Pf

6044@25V

Terminal Pozisyonu

BOTTOM

Number Of Terminals

3

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Maximum Continuous Drain Current A

53.5

Package Width

17.65(Max)

Drain Currentmax Abs Id

55 A

Hts

8541.29.00.95

Parça Durumu

Active

Rohs Code

No

Pulsed Drain Currentmax Idm

214 A

Typical Turnoff Delay Time Ns

80(Max)

Typical Turnon Delay Time Ns

35(Max)

Typical Fall Time Ns

50(Max)

Avalanche Energy Rating Eas

380 mJ

Eu Rohs

Not Compliant

Drain Currentmax Id

53.5 A

REACH Uyumluluk Kodu

unknown

Maximum Power Dissipation Mw

250000

Package Description

HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

Pin Sayısı

3

Typical Gate Charge Vgs Nc

155(Max)@12V

Channel Type

N

Üretici Parça No

IRHNA57260SE

Number Of Elements

1

Eccn Us

Contact Export

Pcb Changed

3

Automotive

No

Package Height

3.07(Max)

Polaritychannel Type

N-CHANNEL