IRHNA57064

Specifications

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.0056 Ω

Part Life Cycle Code

Transferred

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

60

Transistor Element Material

SILICON

Yüzey Montaj

YES

Number Of Elements Per Chip

1

Configuration

Single

Reflow Temperaturemax S

NOT SPECIFIED

Channel Mode

Enhancement

Case Connection

DRAIN

Ds Breakdown Voltagemin

60 V

Typical Rise Time Ns

125(Max)

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Risk Rank

7.49

Maximum Gate Source Voltage V

±20

Standard Package Name

SMD

Additional Feature

HIGH RELIABILITY, RADIATION HARDENED

Maximum Operating Temperature C

150

Supplier Package

SMD-2

Operating Mode

ENHANCEMENT MODE

Package Length

13.46(Max)

Operating Temperaturemax

150 °C

Category

Power MOSFET

Kurşunsuz Kodu

No

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Package Height

3.07(Max)

Automotive

No

Number Of Elements

1

Eccn Us

Contact Export

Channel Type

N

Üretici Parça No

IRHNA57064

Pcb Changed

3

Pin Sayısı

3

Package Description

CHIP CARRIER, R-CBCC-N3

Typical Gate Charge Vgs Nc

165(Max)@12V

Maximum Power Dissipation Mw

250000