IRHN93150

Specifications

Maximum Power Dissipation Mw

150000

Typical Gate Charge Vgs Nc

200(Max)@12V

Pin Sayısı

3

Maximum Drain Source Voltage V

100

Eu Rohs

Not Compliant

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

190(Max)

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

40(Max)

Typical Fall Time Ns

190(Max)

Channel Mode

Enhancement

Typical Rise Time Ns

170(Max)

Parça Durumu

Active

Configuration

Single

Hts

8541.29.00.95

Maximum Gate Source Voltage V

±20

Package Width

11.55(Max)

Maximum Continuous Drain Current A

22

Ppap

No

Maximum Operating Temperature C

150

Supplier Package

SMD-1

Standard Package Name

SMD

Typical Input Capacitance Vds Pf

4300@25V

Category

Power MOSFET

Package Length

16(Max)

Mounting

Surface Mount

Pcb Changed

3

Maximum Drain Source Resistance Mohm

85@12V

Eccn Us

Contact Export

Channel Type

P

Package Height

3.07(Max)

Automotive

No