IRHN9230

Specifications

Ds Breakdown Voltagemin

200 V

Typical Rise Time Ns

90(Max)

Channel Mode

Enhancement

JESD-609 Kodu

e0

Reflow Temperaturemax S

NOT SPECIFIED

Configuration

Single

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Number Of Elements Per Chip

1

Transistor Element Material

SILICON

Yüzey Montaj

YES

Maximum Drain Source Voltage V

200

Minimum Operating Temperature C

-55

Part Life Cycle Code

Obsolete

Process Technology

HEXFET

Drainsource On Resistancemax

0.8 Ω

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Pcb Changed

3

Üretici Parça No

IRHN9230

Channel Type

P

Eccn Us

Contact Export

Number Of Elements

1

Automotive

No

Polaritychannel Type

P-CHANNEL

Package Height

3.07(Max)

Package Shape

RECTANGULAR

Category

Power MOSFET

Operating Temperaturemax

150 °C

Package Length

11.55(Max)

Operating Mode

ENHANCEMENT MODE

Supplier Package

SMD-1

Maximum Operating Temperature C

150

Additional Feature

RADIATION HARDENED

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Risk Rank

5.39

Maximum Gate Source Voltage V

±20

Maximum Gate Source Leakage Current Na

100

Drain Currentmax Abs Id

35 A

Maximum Gate Threshold Voltage V

4

Parça Durumu

Obsolete