IRHN7450SESCS

Specifications

Eu Rohs

Not Compliant

Maximum Drain Source Voltage V

500

Minimum Operating Temperature C

-55

Process Technology

HEXFET

Maximum Power Dissipation Mw

151000

Maximum Idss Ua

50

Supplier Temperature Grade

Military

Typical Gate Charge Vgs Nc

140(Max)@12V

Pin Sayısı

3

Typical Rise Time Ns

60(Max)

Channel Mode

Enhancement

Maximum Gate Threshold Voltage V

4.5

Parça Durumu

Active

Configuration

Single

Typical Turnoff Delay Time Ns

75(Max)

Typical Fall Time Ns

60(Max)

Typical Turnon Delay Time Ns

35(Max)

Number Of Elements Per Chip

1

Ppap

No

Supplier Package

SMD-1

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

2800@25V

Maximum Gate Source Voltage V

±20

Maximum Gate Source Leakage Current Na

100

Package Width

11.55(Max)

Maximum Continuous Drain Current A

12

Maximum Drain Source Resistance Mohm

570@12V

Pcb Changed

3

Channel Type

N

Eccn Us

EAR99

Automotive

No

Package Height

3.07(Max)

Category

Power MOSFET

Mounting

Surface Mount

Package Length

16(Max)