IRHN57250SESCS

Specifications

Configuration

Single

Reflow Temperaturemax S

NOT SPECIFIED

JESD-609 Kodu

e0

Ds Breakdown Voltagemin

200 V

Typical Rise Time Ns

125(Max)

Channel Mode

Enhancement

Case Connection

DRAIN

Number Of Elements Per Chip

1

Terminal Kaplaması

TIN LEAD

Drainsource On Resistancemax

0.06 Ω

Minimum Operating Temperature C

-55

Part Life Cycle Code

Active

Transistor Element Material

SILICON

Yüzey Montaj

YES

Maximum Drain Source Voltage V

200

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Automotive

No

Polaritychannel Type

N-CHANNEL

Package Height

3.07(Max)

Üretici Parça No

IRHN57250SESCS

Channel Type

N

Eccn Us

Contact Export

Number Of Elements

1

Pcb Changed

3

Package Length

16(Max)

Category

Power MOSFET

Package Shape

RECTANGULAR

Standard Package Name

SMD

Supplier Package

SMD-1

Maximum Operating Temperature C

150

Operating Mode

ENHANCEMENT MODE

Maximum Gate Source Voltage V

±20

Risk Rank

5.39

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Hts

8541.29.00.95

Parça Durumu

Active

Typical Fall Time Ns

80(Max)

Typical Turnon Delay Time Ns

35(Max)

Rohs Code

No