IRHMK593160

Specifications

Pin Sayısı

3

Material

Si

Typical Gate Charge Vgs Nc

170(Max)@12V

Maximum Idss Ua

10

Maximum Power Dissipation Mw

208000

Process Technology

R5

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

100

Eu Rohs

Not Compliant

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

35(Max)

Typical Fall Time Ns

45(Max)

Typical Turnoff Delay Time Ns

70(Max)

Configuration

Single

Hts

8541.29.00.95

Tab

Tab

Parça Durumu

Preliminary

Maximum Gate Threshold Voltage V

4

Channel Mode

Enhancement

Typical Rise Time Ns

140(Max)

Maximum Continuous Drain Current A

45

Package Width

6.6(Max)

Maximum Gate Source Leakage Current Na

100

Maximum Gate Source Voltage V

±20

Typical Input Capacitance Vds Pf

6110@25V

Maximum Operating Temperature C

150

Supplier Package

TO-254AA

Ppap

No

Package Length

13.84(Max)

Mounting

Through Hole

Category

Power MOSFET

Package Height

13.84(Max)

Automotive

No

Eccn Us

EAR99

Channel Type

P

Pcb Changed

3

Maximum Drain Source Resistance Mohm

50@12V