IRHLUB7970Z4

Specifications

Drainsource On Resistancemax

1.4 Ω

Maximum Drain Source Voltage V

60

Yüzey Montaj

YES

Transistor Element Material

SILICON

Process Technology

CMOS

Part Life Cycle Code

Active

Minimum Operating Temperature C

-55

Lead Shape

No Lead

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Reflow Temperaturemax S

NOT SPECIFIED

Configuration

Single

Channel Mode

Enhancement

Typical Rise Time Ns

22(Max)

Ds Breakdown Voltagemin

60 V

JESD-609 Kodu

e0

Number Of Elements Per Chip

1

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Standard Package Name

SMD

Operating Mode

ENHANCEMENT MODE

Maximum Operating Temperature C

150

Supplier Package

UB

Reference Standard

RH - 100K Rad(Si)

Maximum Gate Source Voltage V

±10

Risk Rank

5.18

Package Body Material

UNSPECIFIED

Package Height

1.42(Max)

Polaritychannel Type

P-CHANNEL

Automotive

No

Pcb Changed

4

Number Of Elements

1

Eccn Us

Contact Export

Channel Type

P

Üretici Parça No

IRHLUB7970Z4

Package Length

3.25(Max)

Operating Temperaturemax

150 °C

Package Shape

RECTANGULAR

Category

Power MOSFET

REACH Uyumluluk Kodu

unknown

Drain Currentmax Id

0.53 A