IRHLUB7930Z4

Specifications

Yüzey Montaj

YES

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

60

Minimum Operating Temperature C

-55

Part Life Cycle Code

Active

Drainsource On Resistancemax

1.4 Ω

Lead Shape

No Lead

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Typical Rise Time Ns

22(Max)

Ds Breakdown Voltagemin

60 V

Channel Mode

Enhancement

JESD-609 Kodu

e0

Reflow Temperaturemax S

NOT SPECIFIED

Configuration

Single

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Number Of Elements Per Chip

1

Operating Mode

ENHANCEMENT MODE

Supplier Package

UB

Maximum Operating Temperature C

150

Standard Package Name

SMD

Maximum Gate Source Voltage V

±10

Risk Rank

5.4

Package Body Material

UNSPECIFIED

Reference Standard

RH - 300K Rad(Si)

Pcb Changed

4

Channel Type

P

Üretici Parça No

IRHLUB7930Z4

Number Of Elements

1

Eccn Us

Contact Export

Automotive

No

Package Height

1.42(Max)

Polaritychannel Type

P-CHANNEL

Package Shape

RECTANGULAR

Category

Power MOSFET

Operating Temperaturemax

150 °C

Package Length

3.25(Max)

Eu Rohs

Not Compliant

REACH Uyumluluk Kodu

unknown

Drain Currentmax Id

0.53 A