IRHLNMC73110

Specifications

Typical Input Capacitance Vds Pf

572@25V

Maximum Operating Temperature C

150

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

100

Maximum Continuous Drain Current A

6.5

Typical Gate Charge Vgs Nc

11(Max)@4.5V

Material

Si

Maximum Power Dissipation Mw

23200

Maximum Gate Source Voltage V

±10

Configuration

Single

Eccn Us

EAR99

Channel Type

N

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

290@4.5V

Typical Rise Time Ns

75(Max)

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

18(Max)

Typical Fall Time Ns

12(Max)

Typical Turnoff Delay Time Ns

50(Max)

Operating Junction Temperature C

-55 to 150

Category

Power MOSFET