IRHG6110

Specifications

Number Of Elements Per Chip

4

Configuration

Quad

Reflow Temperaturemax S

NOT SPECIFIED

Channel Mode

Enhancement

Ds Breakdown Voltagemin

100 V

Typical Rise Time Ns

19(Max)@P Channel|16(Max)@N Channel

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.7 Ω

Part Life Cycle Code

Transferred

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

100

Transistor Element Material

SILICON

Yüzey Montaj

NO

Package Length

19.3(Max)

Category

Power MOSFET

Kurşunsuz Kodu

No

Package Shape

RECTANGULAR

Package Height

3.3(Max)

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Automotive

No

HTS Kodu

8541.29.00.75

Eccn Us

Contact Export

Number Of Elements

4

Üretici Parça No

IRHG6110

Channel Type

N|P

Pcb Changed

14

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Risk Rank

7.83

Maximum Gate Source Voltage V

±20

Standard Package Name

MO-036AB

Additional Feature

HIGH RELIABILITY

Maximum Operating Temperature C

150

Supplier Package

MO-036AB

Operating Mode

ENHANCEMENT MODE

Typical Fall Time Ns

51(Max)@P Channel|45(Max)@N Channel

Typical Turnon Delay Time Ns

22(Max)@P Channel|20(Max)@N Channel

Pulsed Drain Currentmax Idm

4 A

Typical Turnoff Delay Time Ns

66(Max)@P Channel|65(Max)@N Channel

Hts

8541.29.00.95