IRFR120NHR

Specifications

Number Of Elements Per Chip

1

Typical Gate Charge Vgs Nc

25(Max)@10V

Channel Mode

Enhancement

Automotive

No

Typical Input Capacitance Vds Pf

330@25V

Maximum Drain Source Voltage V

100

Maximum Gate Source Leakage Current Na

100

Continuous Drain Current Id

9.4 A

Montaj

Surface Mount

Category

Power MOSFET

Typical Turnon Delay Time Ns

4.5

Maximum Gate Source Voltage V

±20

Ppap

No

Gate To Source Voltage Vgs

20 V

Pin Sayısı

3

Parça Durumu

Obsolete

Eu Rohs

Not Compliant

Typical Fall Time Ns

23

Maximum Operating Temperature C

175

Typical Rise Time Ns

23

Number Of Elements

1

Eccn Us

EAR99

Typical Turnoff Delay Time Ns

32

Maximum Idss Ua

25

Configuration

Single

Channel Type

N

RoHS

Compliant

Power Dissipation

48 W

Maximum Continuous Drain Current A

9.4

Min. Çalışma Sıcaklığı

-55 °C

Typical Gate Charge10v Nc

25(Max)

Process Technology

HEXFET

Maximum Power Dissipation Mw

48000

Maks. Çalışma Sıcaklığı

175 °C

Maximum Drain Source Resistance Mohm

210@10V

Maximum Gate Threshold Voltage V

4

Minimum Operating Temperature C

-55

Material

Si