IRFH8311TR2PBF

Specifications

Maximum Gate Source Voltage V

±20

Process Technology

HEXFET

Yüzey Montaj

YES

Pin Sayısı

8

Lead Shape

No Lead

Maximum Gate Threshold Voltage V

2.35

Typical Gate Charge10v Nc

66

Eccn Us

EAR99

Package Width

5.75

Risk Rank

5.35

Maximum Continuous Drain Current A

32

Package Length

4.9

Pcb Changed

8

Maximum Operating Temperature C

150

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

3600

Number Of Elements Per Chip

1

Category

Power MOSFET

Typical Input Capacitance Vds Pf

4960@10V

Üretici Parça No

IRFH8311TR2PBF

Mounting

Surface Mount

Supplier Package

QFN EP

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Typical Turnoff Delay Time Ns

21

Channel Mode

Enhancement

Channel Type

N

Polaritychannel Type

N-CHANNEL

Typical Fall Time Ns

12

Ppap

No

Maximum Drain Source Voltage V

30

Rohs Code

Yes

Maximum Gate Source Leakage Current Na

100

Parça Durumu

Obsolete

Ambalaj

Tape and Reel

Typical Gate Charge Vgs Nc

30@4.5V|66@10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Standard Package Name

QFN

Maximum Drain Source Resistance Mohm

2.1@10V

Operating Temperaturemax

150 °C

Power Dissipationmax Abs

96 W