IRFD210PBF

Specifications

Typical Turnon Delay Time Ns

8.2

Channel Type

N

Eccn Us

EAR99

Configuration

Single Dual Drain

Typical Rise Time Ns

17

Maximum Power Dissipation Mw

1000

Typical Turnoff Delay Time Ns

14

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Maximum Drain Source Voltage V

200

Number Of Elements Per Chip

1

Typical Fall Time Ns

8.9

Parça Durumu

Active

Maximum Gate Source Voltage V

±20

Category

Power MOSFET

Typical Input Capacitance Vds Pf

140@25V

Maximum Continuous Drain Current A

0.6

Hts

8541.21.00.95

Eu Rohs

Compliant

Maximum Operating Temperature C

150

Typical Gate Charge Vgs Nc

8.2(Max)@10V

Typical Gate Charge10v Nc

8.2(Max)

Maximum Drain Source Resistance Mohm

1500@10V