IRF7835PBF

Specifications

Package Height

1.5(Max)

Minimum Operating Temperature C

-55

Process Technology

HEXFET

Maximum Drain Source Voltage V

30

Maximum Continuous Drain Current A

19

Supplier Package

SOIC

Pin Sayısı

8

Maximum Operating Temperature C

155

Channel Mode

Enhancement

Eu Rohs

Compliant

Typical Fall Time Ns

4.6

Number Of Elements Per Chip

1

Pcb Changed

8

Typical Turnon Delay Time Ns

9.6

Package Length

5(Max)

Standard Package Name

SOP

Channel Type

N

Maximum Gate Source Voltage V

±20

Typical Input Capacitance Vds Pf

2960@15V

Eccn Us

EAR99

Typical Turnoff Delay Time Ns

14

Maximum Drain Source Resistance Mohm

4.5@10V

Mounting

Surface Mount

Ppap

No

Parça Durumu

Obsolete

Automotive

No

Typical Gate Charge Vgs Nc

22@4.5V

Lead Shape

Gull-wing

Typical Rise Time Ns

13

Maximum Power Dissipation Mw

2500

Configuration

Single Quad Drain Triple Source

Package Width

4(Max)

Category

Power MOSFET