IRF7823PBF

Specifications

Process Technology

HEXFET

Minimum Operating Temperature C

-55

Package Height

1.5(Max)

Eu Rohs

Compliant

Channel Mode

Enhancement

Supplier Package

SOIC

Maximum Operating Temperature C

150

Pin Sayısı

8

Maximum Drain Source Voltage V

30

Maximum Continuous Drain Current A

13

Number Of Elements Per Chip

1

Typical Fall Time Ns

2.7

Pcb Changed

8

Typical Input Capacitance Vds Pf

1110@15V

Channel Type

N

Standard Package Name

SOP

Package Length

5(Max)

Typical Turnon Delay Time Ns

7.2

Maximum Gate Source Voltage V

±20

Mounting

Surface Mount

Typical Turnoff Delay Time Ns

10

Maximum Drain Source Resistance Mohm

8.7@10V

Eccn Us

EAR99

Parça Durumu

Obsolete

Ppap

No

Lead Shape

Gull-wing

Automotive

No

Typical Gate Charge Vgs Nc

2.7@4.5V

Configuration

Single Quad Drain Triple Source

Package Width

4(Max)

Category

Power MOSFET

Typical Rise Time Ns

8.2

Maximum Power Dissipation Mw

2500