IRF7807AHR

Specifications

Minimum Operating Temperature C

-55

Hts

8541.29.00.95

Process Technology

HEXFET

Radyasyon Dayanımı

No

Maximum Operating Temperature C

150

Pin Sayısı

8

Maximum Drain Source Voltage V

30

Maximum Continuous Drain Current A

8.3

Continuous Drain Current Id

8.3 A

Montaj

Surface Mount

Channel Mode

Enhancement

Maks. Çalışma Sıcaklığı

150 °C

Typical Fall Time Ns

6

Number Of Elements Per Chip

1

Ambalaj

Tube

Number Of Elements

1

Gate To Source Voltage Vgs

12 V

Maximum Gate Source Voltage V

±12

Typical Turnon Delay Time Ns

12

Channel Type

N

Min. Çalışma Sıcaklığı

-55 °C

Typical Turnoff Delay Time Ns

25

Maximum Drain Source Resistance Mohm

25@4.5V

Ppap

No

Parça Durumu

Obsolete

RoHS

Compliant

Typical Gate Charge Vgs Nc

12@5V

Automotive

No

Maximum Power Dissipation Mw

2500

Power Dissipation

2.5 W

Typical Rise Time Ns

17

Configuration

Single Quad Drain Triple Source

Category

Power MOSFET