IRF7751PBF

Specifications

Minimum Operating Temperature C

-55

Pcb Changed

8

Configuration

Dual Dual Source

Typical Gate Charge Vgs Nc

29@10V

Maximum Drain Source Resistance Mohm

35@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

4.5

Package Height

1

Maximum Operating Temperature C

150

Package Width

4.4

Maximum Drain Source Voltage V

30

Lead Shape

Gull-wing

Typical Input Capacitance Vds Pf

1464@25V

Maximum Power Dissipation Mw

1000

Number Of Elements Per Chip

2

Supplier Package

TSSOP

Category

Power MOSFET

Eccn Us

EAR99

Channel Type

P

Process Technology

HEXFET

Typical Turnon Delay Time Ns

13

Eu Rohs

Compliant

Typical Fall Time Ns

80

Typical Rise Time Ns

16

Package Length

3

Mounting

Surface Mount

Automotive

No

Parça Durumu

Obsolete

Maximum Gate Source Voltage V

±20

Typical Turnoff Delay Time Ns

155

Material

Si

Pin Sayısı

8

Standard Package Name

SOP

Typical Gate Charge10v Nc

29

Ppap

No