IRF7703PBF

Specifications

Package Height

1

Maximum Operating Temperature C

150

Package Width

4.4

Maximum Drain Source Voltage V

40

Lead Shape

Gull-wing

Typical Input Capacitance Vds Pf

5220@25V

Maximum Power Dissipation Mw

1500

Number Of Elements Per Chip

1

Minimum Operating Temperature C

-55

Pcb Changed

8

Configuration

Single

Typical Gate Charge Vgs Nc

41@4.5V

Maximum Drain Source Resistance Mohm

28@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

6

Automotive

No

Parça Durumu

Obsolete

Maximum Gate Source Voltage V

±20

Typical Turnoff Delay Time Ns

155

Material

Si

Pin Sayısı

8

Standard Package Name

SOP

Ppap

No

Supplier Package

TSSOP

Eccn Us

EAR99

Category

Power MOSFET

Process Technology

HEXFET

Channel Type

P

Typical Turnon Delay Time Ns

43

Eu Rohs

Compliant

Typical Fall Time Ns

77

Typical Rise Time Ns

405

Package Length

3

Mounting

Surface Mount