IRF7506PBF

Specifications

Package Height

0.86

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

180@25V

Part Package Code

SOT

Ambalaj

Tape and Reel

Maximum Power Dissipation Mw

1250

Number Of Elements Per Chip

2

Reflow Temperaturemax S

30

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Part Life Cycle Code

Obsolete

Moisture Sensitivity Levels

1

Operating Temperaturemax

150 °C

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-G8

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

7.5@10V

Maximum Drain Source Resistance Mohm

270@10V

Pcb Changed

8

Configuration

Dual Dual Drain

Drain Currentmax Id

1.7 A

Rohs Code

Yes

Package Shape

RECTANGULAR

Typical Turnoff Delay Time Ns

19

Material

Si

Drain Currentmax Abs Id

0.97 A

Automotive

No

Ds Breakdown Voltagemin

30 V

Ppap

No

Typical Gate Charge10v Nc

7.5

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

260

Process Technology

HEXFET

Channel Type

P

Additional Feature

HIGH RELIABILITY

Yüzey Montaj

YES

Supplier Package

Micro

Package Length

3

Power Dissipationmax Abs

0.39 W

Typical Rise Time Ns

12