IRF7452QPBF

Specifications

Process Technology

HEXFET

Channel Type

N

Tepe Reflow Sıcaklığı (°C)

260

Qualification Status

Not Qualified

Supplier Package

SOIC

Yüzey Montaj

YES

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Power Dissipationmax Abs

2.5 W

Package Length

5(Max)

Typical Rise Time Ns

11

Terminal Formu

GULL WING

Risk Rank

5.12

Eu Rohs

Compliant

Material

Si

Package Shape

RECTANGULAR

Typical Turnoff Delay Time Ns

16

Drain Currentmax Id

4.5 A

Rohs Code

Yes

Standard Package Name

SOP

Automotive

No

Drain Currentmax Abs Id

4.5 A

Typical Gate Charge10v Nc

33

Ppap

No

Ds Breakdown Voltagemin

100 V

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-G8

Maximum Drain Source Resistance Mohm

60@10V

Typical Gate Charge Vgs Nc

33@10V

Channel Mode

Enhancement

Configuration

Single Quad Drain Triple Source

Pcb Changed

8

Maximum Operating Temperature C

150

Package Height

1.5(Max)

Part Life Cycle Code

Obsolete

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Reflow Temperaturemax S

30

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

2500

Part Package Code

SOIC