IRF7413QPBF

Specifications

JESD-609 Kodu

e3

Polaritychannel Type

N-CHANNEL

Category

Power MOSFET

Eccn Us

EAR99

Pulsed Drain Currentmax Idm

58 A

Terminal Pozisyonu

DUAL

HTS Kodu

8541.29.00.95

Mounting

Surface Mount

Typical Gate To Drain Charge Nc

16

Üretici Parça No

IRF7413QPBF

Typical Fall Time Ns

46

Typical Turnon Delay Time Ns

8.6

Package Description

SMALL OUTLINE, R-PDSO-G8

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Number Of Terminals

8

Package Body Material

PLASTIC/EPOXY

Pin Sayısı

8

Maximum Gate Source Voltage V

±20

Parça Durumu

Obsolete

Transistor Application

SWITCHING

Typical Gate To Source Charge Nc

6.1

Avalanche Energy Rating Eas

260 mJ

Number Of Elements

1

Maximum Gate Threshold Voltage V

3

Terminal Kaplaması

Matte Tin (Sn)

Minimum Operating Temperature C

-55

Maximum Continuous Drain Current A

13

Drainsource On Resistancemax

0.011 Ω

Jedec95 Code

MS-012AA

Package Width

4(Max)

REACH Uyumluluk Kodu

compliant

Package Style

SMALL OUTLINE

Maximum Drain Source Voltage V

30

Kurşunsuz Kodu

Yes

Lead Shape

Gull-wing

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

260

Qualification Status

Not Qualified

Process Technology

HEXFET

Channel Type

N