IRF7380TRPBF-1

Specifications

Parça Durumu

Obsolete

Automotive

No

Maximum Gate Source Voltage V

±20

Pin Sayısı

8

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

41

Standard Package Name

SOP

Typical Gate Charge10v Nc

15

Ppap

No

Supplier Package

SOIC

Category

Power MOSFET

Eccn Us

EAR99

Channel Type

N

Process Technology

HEXFET

Maximum Gate Source Leakage Current Na

200

Typical Turnon Delay Time Ns

9

Typical Fall Time Ns

17

Eu Rohs

Compliant

Typical Rise Time Ns

10

Package Length

5(Max)

Mounting

Surface Mount

Maximum Operating Temperature C

150

Package Height

1.5(Max)

Package Width

4(Max)

Maximum Drain Source Voltage V

80

Maximum Idss Ua

20

Lead Shape

Gull-wing

Ambalaj

Tape and Reel

Number Of Elements Per Chip

2

Maximum Power Dissipation Mw

2000

Typical Input Capacitance Vds Pf

660@25V

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

4

Configuration

Dual Dual Drain

Pcb Changed

8

Typical Gate Charge Vgs Nc

15@10V

Maximum Drain Source Resistance Mohm

73@10V

Maximum Continuous Drain Current A

3.6

Channel Mode

Enhancement