IRF7343IPBF

Specifications

Avalanche Energy Rating Eas

72 mJ

Number Of Elements

2

Terminal Kaplaması

Matte Tin (Sn)

Minimum Operating Temperature C

-55

Maximum Continuous Drain Current A

3.4@P Channel|4.7@N Channel

Drainsource On Resistancemax

0.05 Ω

REACH Uyumluluk Kodu

unknown

Jedec95 Code

MS-012AA

Package Width

4(Max)

Package Style

SMALL OUTLINE

Lead Shape

Gull-wing

Kurşunsuz Kodu

Yes

Maximum Drain Source Voltage V

55

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

JESD-609 Kodu

e3

Pulsed Drain Currentmax Idm

38 A

Eccn Us

EAR99

Category

Power MOSFET

Üretici Parça No

IRF7343IPBF

Terminal Pozisyonu

DUAL

Mounting

Surface Mount

Typical Turnon Delay Time Ns

8.3@N Channel|14@P Channel

Package Description

SMALL OUTLINE, R-PDSO-G8

Typical Fall Time Ns

22@P Channel|13@N Channel

Number Of Terminals

8

Package Body Material

PLASTIC/EPOXY

Pin Sayısı

8

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Parça Durumu

Obsolete

Maximum Gate Source Voltage V

±20

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-G8

Maximum Drain Source Resistance Mohm

105@10V@P Channel|50@10V@N Channel

Typical Gate Charge Vgs Nc

26@10V@P Channel|24@10V@N Channel

Channel Mode

Enhancement

Pcb Changed

8

Configuration

Dual Dual Drain

Package Height

1.5(Max)