IRF7341ITRPBF

Specifications

Automotive

No

Parça Durumu

Obsolete

Maximum Gate Source Voltage V

±20

Typical Turnoff Delay Time Ns

32

Material

Si

Pin Sayısı

8

Standard Package Name

SOP

Typical Gate Charge10v Nc

24

Ppap

No

Supplier Package

SOIC

Category

Power MOSFET

Eccn Us

EAR99

Process Technology

HEXFET

Channel Type

N

Typical Turnon Delay Time Ns

8.3

Typical Fall Time Ns

13

Eu Rohs

Compliant

Package Length

5(Max)

Typical Rise Time Ns

3.2

Mounting

Surface Mount

Package Height

1.5(Max)

Maximum Operating Temperature C

150

Package Width

4(Max)

Maximum Drain Source Voltage V

55

Lead Shape

Gull-wing

Typical Input Capacitance Vds Pf

740@25V

Maximum Power Dissipation Mw

2000

Number Of Elements Per Chip

2

Ambalaj

Tape and Reel

Minimum Operating Temperature C

-55

Pcb Changed

8

Configuration

Dual Dual Drain

Typical Gate Charge Vgs Nc

24@10V

Maximum Drain Source Resistance Mohm

50@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

4.7