IRF6645PBF

Specifications

Typical Rise Time Ns

5

Channel Type

N

Eu Rohs

Compliant

Category

Power MOSFET

Automotive

No

Maximum Idss Ua

20

Eccn Us

EAR99

Maximum Gate Threshold Voltage V

4.9

Typical Turnon Delay Time Ns

9.2

Configuration

Single Quad Drain Dual Source

Parça Durumu

Unconfirmed

Pin Sayısı

7

Channel Mode

Enhancement

Pcb Changed

7

Minimum Operating Temperature C

-40

Process Technology

DirectFET

Maximum Gate Source Voltage V

±20

Package Length

3.95(Max)

Maximum Power Dissipation Mw

2200

Ppap

No

Maximum Drain Source Voltage V

100

Maximum Continuous Drain Current A

5.7

Material

Si

Mounting

Surface Mount

Typical Fall Time Ns

5.1

Typical Gate Charge10v Nc

14

Package Height

0.53(Max)

Typical Gate Charge Vgs Nc

14@10V

Maximum Drain Source Resistance Mohm

35@10V

Lead Shape

No Lead

Typical Input Capacitance Vds Pf

890@25V

Maximum Gate Source Leakage Current Na

100

Maximum Operating Temperature C

150

Supplier Package

Direct-FET SJ

Number Of Elements Per Chip

1

Package Width

3.95(Max)

Typical Turnoff Delay Time Ns

18