IRF6218STRR

Specifications

Channel Mode

Enhancement

Pin Sayısı

3

Parça Durumu

Obsolete

Minimum Operating Temperature C

-55

Pcb Changed

2

Process Technology

HEXFET

Maximum Gate Source Voltage V

±20

Package Length

10.67(Max)

Ppap

No

Maximum Power Dissipation Mw

250000

Channel Type

P

Eu Rohs

Not Compliant

Typical Rise Time Ns

70

Ambalaj

Tape and Reel

Category

Power MOSFET

Automotive

No

Eccn Us

EAR99

Typical Turnon Delay Time Ns

21

Configuration

Single

Lead Shape

Gull-wing

Typical Input Capacitance Vds Pf

2210@25V

Supplier Package

D2PAK

Maximum Operating Temperature C

175

Number Of Elements Per Chip

1

Package Width

9.65(Max)

Typical Turnoff Delay Time Ns

35

Maximum Drain Source Voltage V

150

Maximum Continuous Drain Current A

27

Tab

Tab

Mounting

Surface Mount

Typical Gate Charge10v Nc

71

Typical Fall Time Ns

30

Package Height

4.83(Max)

Standard Package Name

TO-263

Typical Gate Charge Vgs Nc

71@10V

Maximum Drain Source Resistance Mohm

150@10V