IRF5Y5305CMSCS

Specifications

Package Length

10.66(Max)

Maximum Power Dissipation Mw

75000

Ppap

No

Maximum Gate Source Voltage V

±20

Process Technology

HEXFET

Pin Sayısı

3

Parça Durumu

Active

Channel Mode

Enhancement

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Turnon Delay Time Ns

26(Max)

Configuration

Single

Automotive

No

Category

Power MOSFET

Eccn Us

EAR99

Typical Rise Time Ns

125(Max)

Eu Rohs

Supplier Unconfirmed

Channel Type

P

Number Of Elements Per Chip

1

Package Width

5.08(Max)

Typical Turnoff Delay Time Ns

56(Max)

Supplier Package

TO-257AA

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

1290@25V

Maximum Drain Source Resistance Mohm

65@10V

Typical Gate Charge Vgs Nc

70(Max)@10V

Typical Fall Time Ns

74(Max)

Typical Gate Charge10v Nc

70(Max)

Package Height

10.92(Max)

Tab

Tab

Maximum Drain Source Voltage V

55

Maximum Continuous Drain Current A

18

Mounting

Through Hole

Material

Si