IRF5NJ9540SCS

Specifications

Hts

8541.29.00.95

Maximum Drain Source Resistance Mohm

117@10V

Typical Gate Charge Vgs Nc

109(Max)@10V

Typical Gate Charge10v Nc

109(Max)

Typical Fall Time Ns

84(Max)

Package Height

2.61(Max)

Maximum Continuous Drain Current A

18

Maximum Drain Source Voltage V

100

Material

Si

Mounting

Surface Mount

Number Of Elements Per Chip

1

Package Width

10.28(Max)

Typical Turnoff Delay Time Ns

87(Max)

Supplier Package

SMD-0.5

Maximum Operating Temperature C

150

Maximum Gate Source Leakage Current Na

100

Typical Input Capacitance Vds Pf

1340@25V

Maximum Gate Threshold Voltage V

4

Typical Turnon Delay Time Ns

29(Max)

Configuration

Single

Category

Power MOSFET

Automotive

No

Eccn Us

EAR99

Maximum Idss Ua

25

Channel Type

P

Eu Rohs

Supplier Unconfirmed

Typical Rise Time Ns

135(Max)

Package Length

7.64(Max)

Ppap

No

Maximum Power Dissipation Mw

75000

Maximum Gate Source Voltage V

±20

Process Technology

HEXFET

Channel Mode

Enhancement

Pin Sayısı

3

Parça Durumu

Active

Minimum Operating Temperature C

-55

Pcb Changed

3