IRF540NSTRLHR

Specifications

Configuration

Single

Typical Turnon Delay Time Ns

11

Ambalaj

Tape and Reel

Category

Power MOSFET

Automotive

No

Channel Type

N

Typical Rise Time Ns

35

Ppap

No

Maximum Power Dissipation Mw

130000

Maximum Gate Source Voltage V

±20

Process Technology

HEXFET

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Parça Durumu

Obsolete

Maximum Drain Source Resistance Mohm

44@10V

Typical Gate Charge Vgs Nc

71(Max)@10V

Typical Gate Charge10v Nc

71(Max)

Typical Fall Time Ns

35

Material

Si

Maximum Drain Source Voltage V

100

Maximum Continuous Drain Current A

33

Typical Turnoff Delay Time Ns

39

Number Of Elements Per Chip

1

Maximum Operating Temperature C

175

Typical Input Capacitance Vds Pf

1960@25V