IRF4104STRLPBF

Specifications

Process Technology

HEXFET

Parça Durumu

Obsolete

Pin Sayısı

3

Channel Mode

Enhancement

Pcb Changed

2

Minimum Operating Temperature C

-55

Package Length

10.67(Max)

Maximum Power Dissipation Mw

140000

Ppap

No

Svhc Exceeds Threshold

Yes

Maximum Gate Source Voltage V

±20

Typical Rise Time Ns

130

Eu Rohs

Compliant with Exemption

Channel Type

N

Typical Turnon Delay Time Ns

16

Configuration

Single

Category

Power MOSFET

Automotive

No

Ambalaj

Tape and Reel

Eccn Us

EAR99

Lead Shape

Gull-wing

Typical Input Capacitance Vds Pf

3000@25V

Number Of Elements Per Chip

1

Package Width

9.65(Max)

Typical Turnoff Delay Time Ns

38

Svhc

Yes

Supplier Package

D2PAK

Maximum Operating Temperature C

175

Typical Fall Time Ns

77

Typical Gate Charge10v Nc

68

Package Height

4.83(Max)

Tab

Tab

Maximum Continuous Drain Current A

120

Maximum Drain Source Voltage V

40

Material

Si

Mounting

Surface Mount

Maximum Drain Source Resistance Mohm

5.5@10V

Standard Package Name

TO-263

Typical Gate Charge Vgs Nc

68@10V