IRF1104STRRPBF

Specifications

Supplier Package

D2PAK

Package Length

10.67(Max)

Mounting

Surface Mount

Typical Gate Charge10v Nc

93(Max)

Channel Mode

Enhancement

Channel Type

N

Pin Sayısı

3

Maximum Drain Source Resistance Mohm

9@10V

Svhc Exceeds Threshold

Yes

Tab

Tab

Eccn Us

EAR99

Number Of Elements Per Chip

1

Ppap

No

Typical Turnon Delay Time Ns

15

Svhc

Yes

Typical Turnoff Delay Time Ns

28

Standard Package Name

TO-263

Typical Fall Time Ns

19

Maximum Operating Temperature C

175

Material

Si

Typical Input Capacitance Vds Pf

2900@25V

Package Width

9.65(Max)

Maximum Gate Source Voltage V

±20

Maximum Drain Source Voltage V

40

Configuration

Single

Parça Durumu

Obsolete

Maximum Power Dissipation Mw

2400

Maximum Continuous Drain Current A

100

Lead Shape

Gull-wing

Automotive

No

Minimum Operating Temperature C

-55

Pcb Changed

2

Eu Rohs

Compliant with Exemption

Process Technology

HEXFET

Typical Gate Charge Vgs Nc

93(Max)@10V

Typical Rise Time Ns

114

Ambalaj

Tape and Reel

Package Height

4.83(Max)

Category

Power MOSFET