IRF1010ESTRRPBF

Specifications

Eu Rohs

Compliant with Exemption

Process Technology

HEXFET

Typical Gate Charge Vgs Nc

130(Max)@10V

Typical Rise Time Ns

78

Ambalaj

Tape and Reel

Package Height

4.83(Max)

Category

Power MOSFET

Parça Durumu

Obsolete

Maximum Power Dissipation Mw

200000

Maximum Continuous Drain Current A

84

Lead Shape

Gull-wing

Automotive

No

Minimum Operating Temperature C

-55

Pcb Changed

2

Ppap

No

Typical Turnon Delay Time Ns

12

Svhc

Yes

Standard Package Name

TO-263

Typical Turnoff Delay Time Ns

48

Typical Fall Time Ns

53

Maximum Operating Temperature C

175

Material

Si

Typical Input Capacitance Vds Pf

3210@25V

Maximum Gate Source Voltage V

±20

Package Width

9.65(Max)

Maximum Drain Source Voltage V

60

Configuration

Single

Supplier Package

D2PAK

Package Length

10.67(Max)

Mounting

Surface Mount

Typical Gate Charge10v Nc

130(Max)

Channel Mode

Enhancement

Channel Type

N

Pin Sayısı

3

Maximum Drain Source Resistance Mohm

12@10V

Svhc Exceeds Threshold

Yes

Tab

Tab

Eccn Us

EAR99

Number Of Elements Per Chip

1