IPW60R099P6XSA1

Specifications

Eccn Us

EAR99

Typical Gate Charge10v Nc

70

Number Of Elements Per Chip

1

Mounting

Through Hole

Maximum Drain Source Voltage V

600

Maximum Gate Source Leakage Current Na

100

Typical Turnoff Delay Time Ns

50

Maximum Idss Ua

5

Maximum Drain Source Resistance Mohm

99@10V

Parça Durumu

Active

Ambalaj

Tube

Typical Rise Time Ns

10

Ppap

No

Typical Input Capacitance Vds Pf

3330@100V

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Fall Time Ns

5

Category

Power MOSFET

Maximum Operating Temperature C

150

Pin Sayısı

3

Channel Type

N

Eu Rohs

Compliant

Package Height

21.1(Max)

Maximum Power Dissipation Mw

278000

Channel Mode

Enhancement

Maximum Gate Source Voltage V

20

Lead Shape

Through Hole

Tab

Tab

Package Length

16.3(Max)

Configuration

Single

Process Technology

CoolMOS P6

Hts

8541.29.00.95

Typical Gate Charge Vgs Nc

70@10V

Automotive

No

Typical Turnon Delay Time Ns

20

Supplier Package

TO-247

Maximum Gate Threshold Voltage V

4.5

Package Width

5.21(Max)

Maximum Continuous Drain Current A

37.9

Standard Package Name

TO-247