IPW60R099CPXK

Specifications

Lead Shape

Through Hole

Maximum Gate Source Voltage V

±20

Tab

Tab

Channel Mode

Enhancement

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Ds Breakdown Voltagemin

600 V

Maximum Power Dissipation Mw

255000

Transistor Element Material

SILICON

Package Length

15.9

Transistor Application

SWITCHING

Automotive

Unknown

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Width

5.3

Maximum Continuous Drain Current A

31

Supplier Package

TO-247

Jedec95 Code

TO-247

Jesd30 Code

R-PSFM-T3

Typical Turnon Delay Time Ns

10

Mounting

Through Hole

Number Of Elements Per Chip

1

Operating Temperaturemax

150 °C

Polaritychannel Type

N-CHANNEL

Typical Gate Charge10v Nc

60

Parça Durumu

Unconfirmed

Maximum Drain Source Resistance Mohm

99@10V

Typical Input Capacitance Vds Pf

2800@100V

Operating Mode

ENHANCEMENT MODE

Yüzey Montaj

NO

Risk Rank

5.76

Pin Sayısı

3

Channel Type

N

Category

Power MOSFET

Maximum Operating Temperature C

150

Number Of Terminals

3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Shape

RECTANGULAR

Configuration

Single

Üretici Parça No

IPW60R099CPXK

Typical Gate Charge Vgs Nc

60@10V