IPP100N04S3-03

Specifications

Additional Feature

ULTRA LOW RESISTANCE

Kılıf / Paket

TO-220-3

Rds On Drainsource Resistance

3.3 mOhms

Seri

OptiMOS-T

Fabrika Paket Adedi

500

Maks. Çalışma Sıcaklığı

+ 175 C

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature

- 55 C

Technology

Si

Moisture Sensitivity Levels

1

Drain Currentmax Abs Id

100 A

Drainsource On Resistancemax

0.0028 Ω

Package Shape

RECTANGULAR

Pd Power Dissipation

214 W

Terminal Pozisyonu

SINGLE

Typical Turnoff Delay Time

46 ns

Qg Gate Charge

110 nC

Number Of Channels

1 Channel

Transistor Polarity

N-Channel

Vgs Gatesource Voltage

- 20 V, + 20 V

Transistor Element Material

SILICON

Number Of Terminals

3

Part Life Cycle Code

Not Recommended

Uzunluk

10 mm

Qualification

AEC-Q101

Vgs Th Gatesource Threshold Voltage

4 V

Risk Rank

8.45

Reflow Temperaturemax S

NOT SPECIFIED

Package Description

GREEN, PLASTIC, TO-220, 3 PIN

Terminal Formu

THROUGH-HOLE

Part Package Code

TO-220AB

Channel Mode

Enhancement

ECCN Kodu

EAR99

HTS Kodu

8541.29.00.95

Number Of Elements

1

Id Continuous Drain Current

100 A

Yükseklik

15.65 mm

Avalanche Energy Rating Eas

898 mJ

Jedec95 Code

TO-220AB

Pin Sayısı

3