IPI200N15N3GXKSA1

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Supplier Package

TO-262

Maximum Power Dissipation Mw

150000

Standard Package Name

I2PAK

Channel Type

N

Channel Mode

Enhancement

Drain Currentmax Abs Id

50 A

Typical Input Capacitance Vds Pf

1820@75V

Operating Mode

ENHANCEMENT MODE

Rohs Code

Yes

Process Technology

OptiMOS 3

Drainsource On Resistancemax

0.02 Ω

Maximum Operating Temperature C

175

Terminal Pozisyonu

SINGLE

Part Life Cycle Code

Obsolete

Pin Sayısı

3

Mounting

Through Hole

Category

Power MOSFET

Jesd30 Code

R-PSIP-T3

Eu Rohs

Compliant

Üretici Parça No

IPI200N15N3GXKSA1

Yüzey Montaj

NO

Typical Fall Time Ns

6

Maximum Drain Source Resistance Mohm

20@10V

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

23@10V

Maximum Drain Source Voltage V

150

Part Package Code

TO-262AA

ECCN Kodu

EAR99

Risk Rank

5.83

Typical Gate Charge10v Nc

23

Package Style

IN-LINE

Number Of Elements Per Chip

1

Polaritychannel Type

N-CHANNEL

Automotive

No

Kurşunsuz Kodu

Yes

Maximum Continuous Drain Current A

50

Power Dissipationmax Abs

150 W

Pulsed Drain Currentmax Idm

200 A

Package Body Material

PLASTIC/EPOXY