IPI200N15N3GHKSA1

Specifications

Typical Rise Time Ns

11

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

23

Typical Fall Time Ns

6

Typical Gate Charge Vgs Nc

23@10V

Maximum Drain Source Resistance Mohm

20@10V

Svhc Exceeds Threshold

Yes

Configuration

Single

Pcb Changed

3

Maximum Drain Source Voltage V

150

Typical Turnon Delay Time Ns

14

Category

Power MOSFET

Tab

Tab

Eu Rohs

Compliant with Exemption

Mounting

Through Hole

Ppap

No

Pin Sayısı

3

Lead Shape

Through Hole

Maximum Gate Source Voltage V

±20

Package Height

9.25

Package Length

10

Parça Durumu

Obsolete

Package Width

4.4

Eccn Us

EAR99

Ambalaj

Tube

Maximum Operating Temperature C

175

Svhc

Yes

Process Technology

OptiMOS 3

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Channel Type

N

Typical Input Capacitance Vds Pf

1820@75V

Typical Turnoff Delay Time Ns

23

Supplier Package

TO-262

Automotive

No

Maximum Continuous Drain Current A

50

Standard Package Name

I2PAK

Maximum Power Dissipation Mw

150000