IPI023NE7N3GAKSA1

Specifications

Typical Rise Time Ns

26

Typical Gate Charge10v Nc

155

Number Of Elements Per Chip

1

Configuration

Single

Typical Gate Charge Vgs Nc

155@10V

Maximum Drain Source Resistance Mohm

2.3@10V

Typical Fall Time Ns

22

Maximum Drain Source Voltage V

75

Pcb Changed

3

Category

Power MOSFET

Typical Turnon Delay Time Ns

19

Eu Rohs

Compliant with Exemption

Tab

Tab

Pin Sayısı

3

Ppap

No

Mounting

Through Hole

Maximum Gate Source Voltage V

±20

Lead Shape

Through Hole

Package Width

10

Parça Durumu

Obsolete

Package Length

9.25

Package Height

4.4

Eccn Us

EAR99

Ambalaj

Tube

Process Technology

OptiMOS

Maximum Operating Temperature C

175

Channel Type

N

Channel Mode

Enhancement

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

70

Typical Input Capacitance Vds Pf

10800@37.5V

Automotive

No

Supplier Package

TO-262

Standard Package Name

I2PAK

Maximum Power Dissipation Mw

300000

Maximum Continuous Drain Current A

120