IPG20N06S4L11TMA1

Specifications

Eccn Us

EAR99

Parça Durumu

Active

Process Technology

OptiMOS

Svhc

Yes

Maximum Operating Temperature C

175

Ambalaj

Tape and Reel

Typical Turnoff Delay Time Ns

58

Typical Input Capacitance Vds Pf

3090@25V

Channel Type

N

Channel Mode

Enhancement

Supplier Temperature Grade

Automotive

Minimum Operating Temperature C

-55

Maximum Gate Source Leakage Current Na

100

Maximum Idss Ua

1

Maximum Gate Threshold Voltage V

2.2

Maximum Power Dissipation Mw

65000

Hts

8541.29.00.95

Maximum Continuous Drain Current A

20

Typical Gate Charge10v Nc

41

Number Of Elements Per Chip

2

Typical Rise Time Ns

3

Maximum Drain Source Voltage V

60

Configuration

Dual Dual Drain

Svhc Exceeds Threshold

Yes

Typical Gate Charge Vgs Nc

41@10V

Maximum Drain Source Resistance Mohm

11.2@10V

Typical Fall Time Ns

19

Eu Rohs

Compliant with Exemption

Category

Power MOSFET

Typical Turnon Delay Time Ns

11

Maximum Gate Source Voltage V

±16