IPB80N06S2LH5ATMA1

Specifications

Typical Gate Charge Vgs Nc

145@10V

Automotive

Yes

Maximum Gate Source Leakage Current Na

100

Üretici Parça No

IPB80N06S2LH5ATMA1

Drainsource On Resistancemax

0.0062 Ω

Maximum Power Dissipation Mw

300000

Jedec95 Code

TO-263AB

Supplier Temperature Grade

Automotive

ECCN Kodu

EAR99

Typical Rise Time Ns

23

Category

Power MOSFET

Configuration

Single

Package Width

9.25

Maximum Gate Threshold Voltage V

2

Svhc Exceeds Threshold

Yes

Svhc

Yes

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Pcb Changed

2

REACH Uyumluluk Kodu

compliant

Jesd30 Code

R-PSSO-G2

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Ambalaj

Tape and Reel

Typical Gate Charge10v Nc

145

Maximum Gate Source Voltage V

±20

Channel Type

N

Standard Package Name

TO-263

Number Of Terminals

2

Tab

Tab

Process Technology

OptiMOS

Maximum Idss Ua

1

Pulsed Drain Currentmax Idm

320 A

Package Shape

RECTANGULAR

Maximum Continuous Drain Current A

80

Maximum Drain Source Voltage V

55

Polaritychannel Type

N-CHANNEL

Pin Sayısı

3

Maximum Operating Temperature C

175

Ds Breakdown Voltagemin

55 V