IPB65R280E6XT

Specifications

Maximum Drain Source Resistance Mohm

280@10V

Typical Turnoff Delay Time Ns

76

Svhc Exceeds Threshold

Yes

Eccn Us

EAR99

Parça Durumu

NRND

Svhc

Yes

Typical Gate Charge Vgs Nc

45@10V

Configuration

Single

Category

Power MOSFET

Maximum Power Dissipation Mw

104000

Typical Rise Time Ns

9

Process Technology

CoolMOS

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

700

Maximum Continuous Drain Current A

13.8

Maximum Operating Temperature C

150

Ambalaj

Tape and Reel

Typical Gate Charge10v Nc

45

Typical Fall Time Ns

9

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

950@100V

Maximum Gate Source Voltage V

20

Typical Turnon Delay Time Ns

11

Channel Type

N