IPB048N06LGXT

Specifications

Maximum Gate Source Voltage V

±20

Typical Turnon Delay Time Ns

18

Package Length

10

Standard Package Name

TO-263

Channel Type

N

Typical Input Capacitance Vds Pf

5700@30V

Pcb Changed

2

Typical Fall Time Ns

24

Number Of Elements Per Chip

1

Ambalaj

Tape and Reel

Typical Gate Charge10v Nc

169

Maximum Continuous Drain Current A

100

Maximum Drain Source Voltage V

60

Maximum Operating Temperature C

175

Pin Sayısı

3

Supplier Package

D2PAK

Channel Mode

Enhancement

Eu Rohs

Compliant with Exemption

Package Height

4.4

Minimum Operating Temperature C

-55

Tab

Tab

Process Technology

OptiMOS

Maximum Power Dissipation Mw

300000

Typical Rise Time Ns

25

Configuration

Single

Package Width

9.25

Category

Power MOSFET

Typical Gate Charge Vgs Nc

169@10V

Automotive

No

Lead Shape

Gull-wing

Svhc

Yes

Ppap

No

Parça Durumu

Obsolete

Eccn Us

EAR99

Maximum Drain Source Resistance Mohm

4.4@10V

Typical Turnoff Delay Time Ns

98

Mounting

Surface Mount

Svhc Exceeds Threshold

Yes